The AP program aims to provide a unique forum to expand the scope of atomic layer deposition (ALD) and atomic layer etching (ALE) processes toward understanding the fundamentals needed to achieve true atomic scale precision and the application of such processing on various areas of interest to the broader AVS community. The emphasis will be on synergistic efforts, across multiple AVS divisions and groups, to generate area-selective processes as well as novel characterization methods to advance the field of processing at the atomic scale. We are excited to offer several sessions in collaboration with Plasma Science & Technology Division, the Thin Film Division as well as the Electronic Materials and Photonics Division focusing on area selective deposition, atomic layer process chemistry & surface characterization, both thermal and plasma-based atomic layer etching, and atomic layer deposition.
Areas of Interest: AP is seeking abstracts in the following areas:
AP+PS+TF-WeM: Thermal and Plasma-Enhanced Atomic Layer Deposition
AP+AS+EL+EM+PS+TF-ThM: Advancing Atomic Scale Processing through Modeling and Simulation
- Michael Nolan, Tyndall Institute, Ireland, “Multiscale Simulations for Atomic Scale Processing”
AP+PS+TF-ThA: Emerging Applications for Atomic Scale Processing (ALD/ALE) including Precursors and Surface Reactions
AP+EM+PS+TF-FrM: Area Selective Processing and Patterning
- Silvia Armini, IMEC Belgium, “Area-Selective Deposition by Surface Engineering for Applications in Nanoelectronics: Enablement of 2d and 3d Device Scaling and Self-Alignment”
- Stacey Bent, Stanford University, “Area Selective ALD for Future Engineering Challenges”
AP-ThP: Atomic Scale Processing Poster Session